俎永熙

俎永熙 博士 1962年8月出生于山東省壽光縣，獲臺灣新竹清華大學材料科學半導體材料組學士，美國伊利諾大學香檳校區- 半導體材料科學博士。   

個人經歷：
1991實驗發明Photo-stimulated Silicon Atomic Layer Epitay
1994于美國德州儀器研發總部(Corporate R&D of Texas Instruments)共同開發世界首例4Gb DRAM High-K BST storage cell
1999遴選為美國德州儀器公司杰出資深研究人員
2003于任中芯國際半導體制造公司，獲頒上海市創新發展半導體130nm銅制程開發獎
2005升任中芯國際半導體制造公司副總經理，負責全球客戶工程及服務管理，創造業績3億美金營收和支援公司15億美金營收
2008出任中芯國際半導體制造公司研發副總經理，引進并優化IBM 45nm制程
2010創業于新竹科學園區，出任董事長兼執行長，芯傳科技以綠能鋰電池管理芯片產品之標竿企業為目標
2012成為清華大學百人會和兩岸企業家協會成員
2013 遴選為新竹清華大學傑出校友
2017矽力杰有限公司(TWSE:6415)購併芯傳科技，出任矽力杰顧問
Up-to-date- 發表著名期刊及國際會議論文共計20篇，專利共計37件

US Patents
1.Robert Tsu, J. McPherson, W.R. McKee, and T. Bonifield, “Line-to-Line Reliability Enhancement Using a Dielectric Liner for a Low Dielectric Constant Interlevel and Intralevel Dielectric Layer”, US Patent#7,402,514 (2008).
2.Jiang; Qing-Tang, Tsu; Robert, Brennan; Kenneth D., “Copper Transition Layer for Improving Copper Interconnection Reliability”, US Patent#6,951,812 (2005).
3.Asano; Isamu, Tsu; Robert, “Method of Manufacturing a Semiconductor Integrated Circuit Device Having a Memory Cell Array and a Peripheral Circuit Region”, US Patent#6,696,337 (2004).
4.Jiang; Qing-Tang, Tsu; Robert, Brennan; Kenneth D., “Copper Transition Layer for Improving Copper Interconnection Reliability”, US Patent#6,693,356 (2004).
5.Tsu; Robert, Asano; Isamu, Iijima; Shinpei, McKee; William R., “Integrated Circuit Capacitor”, US Patent#6,653,676 (2003).
6.Cho; Chih-Chen, McKee; Jeffrey A., William R., Asano; Isamu, Tsu; Robert Y., “Integrated Circuit and Method”, US Patent#6,528,888 (2003).
7.Robert Tsu, Q.Z. Hong, and W.R. McKee, “Yield Improvement of Dual Damascene Through Oxide Filling”, US Patent#6,461,955 (2002).
8.Asano; Isamu, Tsu; Robert, “Method of Manufacturing a Semiconductor Integrated Circuit Device Including a DRAM Having Reduced Parasitic Bit Line Capacity”, US Patent#6,417,045 (2002).
9.Kulwicki; Bernard M., Tsu; Robert, “Barium Strontium Titanate (BST) Thin Films Using Boron”, US Patent#6,331,325 (2001).
10.Tsu; Robert, Asano; Isamu, Iijima; Shinpei, MaKee; William R., “Integrated Circuit Capacitor”, US Patent#6,294,420 (2001).
11.Hwang; Ming, Tsu; Robert, Hsu; Wei-Yung, “Selective Oxidation Methods for Metal Oxide Deposition on Metals in Capacitor Fabrication”, US Patent#6,207,561 (2001).
12.Robert Tsu, S. Aoyama, and S. Ando, “Method of Fabricating In-Situ Doped Rough Polycrystalline Silicon Using A Single Wafer Reactor”, US Patent#6,194,292 (2001).
13.Asano; Isamu, Tsu; Robert, “Semiconductor Integrated Circuit Device Including a DRAM Having Reduced Parasitic Bit Line Capacitance and Method of Manufacturing Same”, US Patent#6,168,985 (2001).
14.Tsu; Robert, McKee; William R., Iijima; Shimpei, Asano; Isamu, Kunitomo; Masato, “Method for Fabricating an Integrated Circuit Structure”, US Patent#6,096,597 (2000).
15.Robert Tsu, William R. McKee, and Ming Hwang, “In-Situ Doped Rough Polysilicon Storage Cell Structure Formed Using Gas Phase Nucleation”, US Patent# 6,060,354 (2000).
16. Including a DRAM Having Reduced Parasitic Bit Line Capacitance”, US Patent#6,037,207, (2000).
17.Robert Tsu, Jing Shu, Isamu Asano, and Jeff McKee, “Self-Aligned Multiple Crown Storage Capacitor and Method of Formation”, US patent #5,972,769 (1999).
18.Robert Tsu and Bernard M. Kulwicki, “Method of Making Barium Strontium Titantate (BST) Thin Films by Erbium Donor”, US patent # 5,731,220 (1998).
19.Robert Tsu and Bernard M. Kulwicki, “Barium Strontium Titantate (BST) Thin Films by Erbium Donor Doping”, US patent # 5,635,741 (1997).
20.Bernard M. Kulwicki, “Barium Strontium Titanate (BST) Think Films Using Boron”, US patent # 5,617,290 (1997).
21.Scott Summerfelt, Howard Beratan, and Robert Tsu, “ Processing Methods for High K-Dielectric Constant Materials”, US patent # 5,609,927 (1997).
22.Robert Tsu and Wei-Yung Hsu, “Sloped Storage Node for A 3-D DRAM Cell Structure”, US patent # 5,573,979 (1996).
23.Robert Tsu, Bernard Kulwicki, “Barium Strontium Titanate (BST) Thin Film by Holmium Donor”, US patent # 5,453,908 (1995).
24.Robert Tsu, “Reliability Enhancement of Aluminum Interconnects by Reacting Aluminum Leads with a Strengthening Gas”, US patent # 5,432,128 (1995).

中文專利：
1.林明為, 俎永熙, 林慶龍, 陳科宏, 李輝, 王士偉, 吳緯權, 黃炳境, “電流模式直流轉換器”, 中國, 專利授權公告號: CN102761249B (2015).
2.林明為, 俎永熙, 林慶龍, 陳科宏, 李昱輝, 王士偉, 吳緯權, 黃炳境, “電流模式直流轉換器及其直流轉換方法”, 臺灣, 專利證書號: I463778 (2014).
3.俎永熙, 林慶龍, “電池管理電路、電池模塊與電池管理方法”, 臺灣, 專利證書號: I415363 (2013).
4.俎永熙, 林慶龍, “電池管理電路、電池模塊與電池管理方法”, 中國, 專利授權公告號: CN102377214A (2012).
5.張海洋, 俎永熙, 黃怡, 李國鋒, “MOS器件的檢測方法及制造方法”, 中國, 專利授權公告號: CN102024726B (2012).
6.俎永熙, 洪其中, 麥威廉, “利用氧化物填充之雙金屬鑲嵌制造方法”, 臺灣, 專利證書號: 473837 (2002).
7.淺野勇, 俎永熙, “半導體集成電路制置及其制造方法”, 臺灣, 專利證書號: 406398 (2000).
8.俎永熙, 淺野勇, 飯島晉平, 麥威廉, “形成集成電路電容器、半導體結構、記憶裝置之方法及集成電路電容器與制造積體半導體記憶裝置之電容器結構之方法”, 臺灣, 專利證書號: 400601 (2000).
9.俎永熙, 麥威廉, 黃明彰, “粗糙多晶硅單元格及其形成方法”, 臺灣, 專利證書號: 396500 (2000).
10.俎永熙, 淺野勇, 麥杰夫, 蘇珍, “半導體單元格結構及其形成法與多冠儲存電容器及記憶裝置”, 臺灣, 專利證書號: 391064 (2000).
11.俎永熙, 庫伯納, “藉鉺施體摻雜之鈦酸鋇鍶薄膜之改良”, 臺灣, 專利證書號: 376562 (1999).
12.俎永熙, 庫伯納, “使用硼之鈦酸鋇鍶薄膜之改良”, 臺灣, 專利證書號: 301767 (1997).
13.俎永熙, 庫伯納, “藉鈥施體摻雜之鈦酸鋇鍶薄膜之改良”, 臺灣, 專利證書號: 297148 (1997).

Publications
1. Robert Tsu, Joe McPherson, and Randy McKee, “Low-k Dielectric Reliability Issues Associated with Cu Dual Damascene Structure”, International Reliability Physics Conference Proceeding, p.384 (2000).
2. Robert Tsu, S. Aoyama, G. Chung, R. McKee, S. Iijima, S. Asano, S. Iijima, S. Asano, M. Kunitomo, S. Yamamoto, and T. Tamaru, “256Mb DRAM Storage Cell: Materials, Processes, and Integration”, Texas Instruments CR&DTC (1996).
3. R. Khamankar, B. Jiang, Robert Tsu, W.-Y. Hsu, J. Nulman, S. Summerfelt, M. Anthony, and Jack Lee, “A Novel Low-Temperature Process for High Dielectric Constant BST Thin Films for ULSI DRAM Applications”, VLSI Tech. Dig., 127 (1995).
4. W.-Y. Hsu, J.D. Luttmer, Robert Tsu, S. Summerfelt, M. Bedekar, T. Tokumoto, and J. Nulman, Appl. Phys. Lett. 66, 2975 (1995).
5. Yukio Fukuda, Katsuhiro Aoki, Shintaro Aoyama, Akitoshi Nishimura, Scott Summerfelt, and Robert Tsu, “Effects of Interfacial Roughness on the Leakage Properties of SrTiO3 Thin Film Capacitors”, Integrated Ferroelectrics, Vol. 11, pp.121-127 (1995).
6. G. Li, Y.-C. Chang, Robert Tsu, and Joe Greene, “Electronic Structure of the Si(001)2x1:H Surface and Pathway for H2 Desorption”, Surface Science 330, 20 (1995).
7. Robert Tsu, Hung-Yu Liu, Wei-Yung Hsu, Scott Summerfelt, Katsuhiro Aoki, and Bruce Gnade, “ Correlations of Ba1-xSrxTi3 Materials and Dielectric Properties”, Proceeding of Ferroelectric Thin Film IV, eds. S.B. Desu, B.A. Tuttle, R. Ramesh, and T. Shiosaki, vol. 361, 275 (1995).
8. Y. Wu, E.G. Jacobs, R.F. Pinzzotto, Robert Tsu, H.Y. Liu, S. Summerfelt, and B. Gnade, “Microstructural and Electrical Characterization of BST Thin Films”, Proceeding of Ferroelectric Thin Film IV, eds. S.B. Desu, B.A. Tuttle, R. Ramesh, and T. Shiosaki, vol. 361, 269 (1995).
9. Robert Tsu, M.-A. Hasen, and J.E. Greene, “Surface Segregation, Roughening, and Growth Mode Transitions During Si Growth on Ge(001)2x1 by Gas-Source Molecular Beam Epitaxy from Si2H6”, J. Appl. Phys. 75(1), 240 (1994).
10. J. Chapple-Sokol, S. Barbee, D. Kotecki, S. Bilodeau, P. Van Buskirk, P. Kirlin, S. Summerfelt, B. Gnade, and Robert Tsu, 6th Integrated Ferroelectrics (1994).
11. Robert Tsu, D.-S. Lin, D. Lubben, T.R. Bramblett, T.C. Chiang, and J.E. Greene, “Adsorption and Dissociation of Si2H6 on Ge(001)2x1”, Surf. Sci. 280, 265 (1993).
12. Robert Tsu, D. Lubben, T.R. Bramblett, and J.E. Greene, “ Si2H6 Adsorption and Dissociation Pathways on Ge(001)2x1: Mechanisms for Heterogeneous Atomic Layer Epitaxy”, Thin Solid Films 225, 191 (1993).
13. Robert Tsu, D.-S. Lin, J.E. Greene, and T.-C. Chiang, “ Ge Segregation and Surface Roughening During Si Growth on Ge(001)2x1 by Gas-Source Molecular Beam Epitaxy from Si2H6”, Mater. Res. Soc. Symp. Proc. 280, 281 (1993).
14. X.J. Zhang, G. Xue, A. Agarwal, Robert Tsu, M.-A. Hason, J.E. Greene, and A. Rockett, “Thermal Desorption of UV-Ozone Oxidized Ge(001)2x1 for Substrate Cleaning”, J. Vac. Sci. Technol. A11, 2553 (1993).
15. H.Z. Xiao, Robert Tsu, I.M. Robertson, H.K. Birnbaum, and J.E. Greene, “Growth of Si on Ge(001)2x1 by Gas-Source Molecular Beam Epitaxy”, Proc. 52th Annual Meeting of the Microscopy Society of America, ed. By G.W. Railey and C.L. Rieder, P.149 (1993).
16. D.-S. Lin, T. Miller, T.-C. Chiang, Robert Tsu, and J.E. Greene, “Thermal Reactions of Disilane on Si(100) Studied by Synchrotron-Radiation Photoemission”, Phys. Rev. B 48, 11846 (1993).
17. D.-S. Lin, E.S. Hirschorn, T.-C. Chiang, Robert Tsu, D. Lubben, and J.E. Greene, “Scanning-Tunneling-Microscopy Studies of Disilane Adsorption and Pyrolytic Growth on Si(100)2x1”, Phys. Rev. B45, 3494 (1992).
18. Robert Tsu, D. Lubben, T.R. Bramblett, and J.E. Greene, “ Mechanisms of Excimer Laser Cleaning of Air-Exposed Si(100) Surfaces Studied by Auger Electron Spectroscopy, Electron Energy-Loss Spectroscopy, Reflection High Energy Electron Diffraction, and Secondary-Ion Mass Spectrometry”, J. Vac. Sci. Technol. A9(6), 3003 (1991).
19. D. Lubben, Robert Tsu, T.R. Bramblett, and J.E. Greene, “Mechanisms and Kinetics of Si Atomic-Layer Epitaxy on Si(001)2x1 from Si2H6”, J. Vac. Sci. Technol. A9(6), 3003, (1991).
20. D. Lubben, Robert Tsu, T.R. Bramblett, and J.E. Greene, “UV Photostimulated Si Atomic-Layer Epitaxy”, Mater. Res. Soc. Symp. Prod. 222, 177 (1991).